Silicon nitride

Results: 161



#Item
61CS_ad_213x282mm_semiconductor_today_feb14.indd

CS_ad_213x282mm_semiconductor_today_feb14.indd

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Source URL: www.semiconductor-today.com

Language: English - Date: 2015-04-08 17:14:33
62CS_ad_213x282mm_semiconductor_today_feb14.indd

CS_ad_213x282mm_semiconductor_today_feb14.indd

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Source URL: www.semiconductor-today.com

Language: English - Date: 2015-04-08 17:14:26
63CS_ad_213x282mm_semiconductor_today_feb14.indd

CS_ad_213x282mm_semiconductor_today_feb14.indd

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Source URL: www.semiconductor-today.com

Language: English - Date: 2015-01-23 09:11:01
64Three-dimensional opto-electric integration

Three-dimensional opto-electric integration

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Source URL: phys.org

Language: English - Date: 2015-04-17 00:22:08
65Fabrication and characterization of a micromechanical sensor for differential detection of nanoscale motions - Microelectromechanical Systems, Journal of

Fabrication and characterization of a micromechanical sensor for differential detection of nanoscale motions - Microelectromechanical Systems, Journal of

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Source URL: manalis-lab.mit.edu

Language: English - Date: 2011-02-10 14:18:35
66APPLIED PHYSICS LETTERS  VOLUME 76, NUMBER 8 21 FEBRUARY 2000

APPLIED PHYSICS LETTERS VOLUME 76, NUMBER 8 21 FEBRUARY 2000

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Source URL: manalis-lab.mit.edu

Language: English - Date: 2011-02-10 14:18:35
67Congratulations on Your Investment! Read the following BEFORE USING YOUR SHELVES Safety Information 2 Important warnings and 4 guidelines to protect you against SEVERE INJURY… 1. All silicon carbide and silicon nitride

Congratulations on Your Investment! Read the following BEFORE USING YOUR SHELVES Safety Information 2 Important warnings and 4 guidelines to protect you against SEVERE INJURY… 1. All silicon carbide and silicon nitride

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Source URL: www.lagunaclay.com

Language: English - Date: 2010-12-13 10:23:55
68IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 4, APRIL[removed]Bottom-Gate Thin-Film Transistors Based on GaN Active Channel Layer

IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 4, APRIL[removed]Bottom-Gate Thin-Film Transistors Based on GaN Active Channel Layer

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Source URL: www.pskl.ust.hk

Language: English - Date: 2014-10-09 23:23:02
69Growth and characterization of horizontal GaN wires on silicon Xinbo Zou, Xing Lu, Ryan Lucas, Thomas F. Kuech, Jonathan W. Choi, Padma Gopalan, and Kei May Lau Citation: Applied Physics Letters 104, [removed]); doi:

Growth and characterization of horizontal GaN wires on silicon Xinbo Zou, Xing Lu, Ryan Lucas, Thomas F. Kuech, Jonathan W. Choi, Padma Gopalan, and Kei May Lau Citation: Applied Physics Letters 104, [removed]); doi:

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Source URL: ias.ust.hk

Language: English - Date: 2014-08-19 04:51:40
704 Millimeter Wave Devices 4-1 Research Project on Millimeter-wave Semiconductor Devices Toshiaki MATSUI, Keisuke SHINOHARA, Masataka HIGASHIWAKI, and Nobumitsu HIROSE

4 Millimeter Wave Devices 4-1 Research Project on Millimeter-wave Semiconductor Devices Toshiaki MATSUI, Keisuke SHINOHARA, Masataka HIGASHIWAKI, and Nobumitsu HIROSE

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Source URL: www.nict.go.jp

Language: English - Date: 2013-11-20 20:58:24